English 
WMM053N10HGS
Wayon
Product Name:
100V N-Channel Enhancement Mode Power MOSFET WMM053N10HGS TO-263
Product Description:
Description：
WMM053N10HGS uses Wayon's advanced power trench MOSFET
technology that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance. This
device is well suited for high efficiency fast switching applications.
Features:
● VDS= 100V, ID = 120A
● RDS(on) < 5.5mΩ VGS = 10V
● Green Device Available
● Low Gate Charge
● 100% EAS Guaranteed
Applications:
● Power Management Switches
● DC/DC Converter
● Low Gate Charge
Introducing the 100V N-Channel Enhancement Mode Power MOSFET WMM053N10HGS TO-263. This professional-grade product is designed to effortlessly switch or amplify electronic signals with utmost precision and reliability.
With a voltage rating of 100V, this power MOSFET offers exceptional performance and efficiency in various electronic applications. Its N-Channel enhancement mode ensures seamless signal control, allowing for seamless switching and amplification of electronic signals.
The WMM053N10HGS TO-263 MOSFET is meticulously crafted to meet the highest industry standards, guaranteeing its durability and long-lasting performance. Its advanced design and cutting-edge technology make it an ideal choice for professionals and enthusiasts alike.
Whether you're working on audio amplifiers, power supplies, or motor control circuits, this power MOSFET is a versatile solution that will elevate your electronic projects to new heights. Its reliable performance and robust construction make it suitable for a wide range of applications, ensuring optimal functionality and efficiency.
Invest in the 100V N-Channel Enhancement Mode Power MOSFET WMM053N10HGS TO-263 and experience the power of seamless signal control. Elevate your electronic projects with this professional-grade product that guarantees exceptional performance and reliability.
Product Specifications :
Product Name:
100V N-Channel Enhancement Mode Power MOSFET WMM053N10HGS TO-263
Product Description:
Description：
WMM053N10HGS uses Wayon's advanced power trench MOSFET
technology that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance. This
device is well suited for high efficiency fast switching applications.
Features:
● VDS= 100V, ID = 120A
● RDS(on) < 5.5mΩ VGS = 10V
● Green Device Available
● Low Gate Charge
● 100% EAS Guaranteed
Applications:
● Power Management Switches
● DC/DC Converter
● Low Gate Charge
Introducing the 100V N-Channel Enhancement Mode Power MOSFET WMM053N10HGS TO-263. This professional-grade product is designed to effortlessly switch or amplify electronic signals with utmost precision and reliability.
With a voltage rating of 100V, this power MOSFET offers exceptional performance and efficiency in various electronic applications. Its N-Channel enhancement mode ensures seamless signal control, allowing for seamless switching and amplification of electronic signals.
The WMM053N10HGS TO-263 MOSFET is meticulously crafted to meet the highest industry standards, guaranteeing its durability and long-lasting performance. Its advanced design and cutting-edge technology make it an ideal choice for professionals and enthusiasts alike.
Whether you're working on audio amplifiers, power supplies, or motor control circuits, this power MOSFET is a versatile solution that will elevate your electronic projects to new heights. Its reliable performance and robust construction make it suitable for a wide range of applications, ensuring optimal functionality and efficiency.
Invest in the 100V N-Channel Enhancement Mode Power MOSFET WMM053N10HGS TO-263 and experience the power of seamless signal control. Elevate your electronic projects with this professional-grade product that guarantees exceptional performance and reliability.
Product Specifications :
