SiC MOSFET (Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of power MOSFET that utilizes silicon carbide as the semiconductor material. SiC MOSFETs are designed for high-performance power electronics applications, offering several advantages over traditional silicon-based MOSFETs. They are particularly well-suited for high-voltage, high-temperature, and high-frequency environments.