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Home » Products » Silicon Carbide Diode » SIC MOSFET » 1200V/600A/2.8mΩ/18V SiC Mosfet Module, HPD, ASC600N1200HPD

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1200V/600A/2.8mΩ/18V SiC Mosfet Module, HPD, ASC600N1200HPD

1200V N-Channel MOSFET
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  • ASC600N1200HPD

  • Merry

1200V/600A/2.8mΩ/18V SiC Mosfet Module, HPD, ASC600N1200HPD

Features :
- High Temperature, Humidity, and Bias Operation
- Ultra Low Loss <10nH
- High-Frequency Operation
- Zero Turn-off Tail Current from MOSFET
- Normally-off, Fail-safe Device Operation
- Ease of Paralleling
- Cu Baseplate and Silicon Nitride Insulator
- Isolated voltage to DC 4200 V

Applications :
- Enables Compact, Lightweight, Efficient Systems
- Harsh Outdoor Environment Installation
- Mitigates Over-voltage Protection
- Reduced Thermal Requirements
- Reduced System Cost

ASC600N1200HPDName1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

GD560HTX75P7HN

Name1

MG25P12E1

Name2


products-1

Name1

GD660HFA75N5HY_B29

Name2

ASC600N1200HPD-1_页面_1

ASC600N1200HPD-1_页面_2

ASC600N1200HPD-1_页面_3

COMPANY PROFILE-01

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En_Merry catalogue_16-9_页面_10

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FAQ-01


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1200V N-Channel MOSFET 600A/18V MOSFET HPD MOSFET ASC600N1200HPD MOSFET Fast Recovery Diode Rectifier

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Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China 
Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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