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2N7002BDW
Merry
60V 0.35A N-Channel Enhancement Mode Field Effect Transistor, SOT-523, 2N7002BE
Product Summary :
- VDS 60V
- ID 350mA
- RDS(ON)( at VGS=10V) <1000mΩ
- RDS(ON)( at VGS=4.5V) <1400mΩ
General Description :
- Trench Power MV MOSFET technology
- Voltage controlled small signal switch
- Low input Capacitance
- Fast Switching Speed
- Low Input / Output Leakage
- Moisture Sensitivity Level 1
- Epoxy Meets UL 94 V-0 Flammability Rating
- Halogen Free
Applications :
- Battery operated systems
- Solid-state relays
- Direct logic-level interface:TTL/CMOS
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60V 0.35A N-Channel Enhancement Mode Field Effect Transistor, SOT-523, 2N7002BE
Product Summary :
- VDS 60V
- ID 350mA
- RDS(ON)( at VGS=10V) <1000mΩ
- RDS(ON)( at VGS=4.5V) <1400mΩ
General Description :
- Trench Power MV MOSFET technology
- Voltage controlled small signal switch
- Low input Capacitance
- Fast Switching Speed
- Low Input / Output Leakage
- Moisture Sensitivity Level 1
- Epoxy Meets UL 94 V-0 Flammability Rating
- Halogen Free
Applications :
- Battery operated systems
- Solid-state relays
- Direct logic-level interface:TTL/CMOS
Name1
Name2
Name1
Name2
Name1
Name2
Name1
Name2