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Home » Products » Transistor » MOSFET » -100V -28A P-Channel Enhancement Mode Field Effect Transistor, TO-252, YJD055P10A

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-100V -28A P-Channel Enhancement Mode Field Effect Transistor, TO-252, YJD055P10A

-100V -28A P-Channel Enhancement Mode Field Effect Transistor
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  • YJD055P10A

  • Merry

-100V -28A P-Channel Enhancement Mode Field Effect Transistor, TO-252, YJD055P10A

Product Summary :
- VDS -100V
- ID -28A
- RDS(ON)( at VGS=-10V) <55mΩ
- RDS(ON)( at VGS=-4.5V) <64mΩ
- 100% EAS Tested
- 100% ▽VDS Tested

General Description :
- Trench Power MOSFET technology
- Low RDS(on) & FOM
- Extremely low switching loss
- Excellent stability and uniformity
- High density cell design for low RDS(ON)
- Moisture Sensitivity Level 1
- Epoxy Meets UL 94 V-0 Flammability Rating Halogen Free
- Halogen Free

Applications :
- Power management
- Portable equipment


YJD055P10AName1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

MG200HF12LEC2

Name1

MG25P12E1

Name2


products-1

Name1

GD300HFX170C2S

Name2

YJD055P10A-1_页面_1

YJD055P10A-1_页面_2

YJD055P10A-1_页面_3

COMPANY PROFILE-01

En_Merry catalogue_16-9_页面_01

En_Merry catalogue_16-9_页面_02

En_Merry catalogue_16-9_页面_03

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En_Merry catalogue_16-9_页面_06

En_Merry catalogue_16-9_页面_07

En_Merry catalogue_16-9_页面_08

En_Merry catalogue_16-9_页面_09

En_Merry catalogue_16-9_页面_10

En_Merry catalogue_16-9_页面_11

FAQ-01


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-100V -28A P-Channel Transistor TO-252 Transistor YJD055P10A Transistor High Voltage Diode 500kv Fast Recovery Diode MT200DT-L2

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