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LSB65R180GT
Product Name:
High Voltage N-channel 650V, 20A, 0.18Ω Power MOSFET LSB65R180GT
Product Description:
Description:
LonFETTM Power MOSFET is fabricated
using advanced super junction technology.
The resulting device has extremely low on
resistance, making it especially suitable for
applications which require superior power
density and outstanding efficiency.
Features:
Ultra low RDS(on)
Ultra low gate charge (typ. Qg = 39nC)
100% UIS tested
RoHS compliant
Applications:
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
Product Summary:
VDS Tj,max: 700V
RDS(on),max: 0.18Ω
IDM: 60A
Qg,typ: 39nC
Introducing the High Voltage N-channel 650V, 20A, 0.18Ω Power MOSFET LSB65R180GT, a cutting-edge solution designed to meet the demanding requirements of electronic devices.
This professional-grade MOSFET is specifically engineered for switching and amplifying electronic signals, making it an ideal choice for a wide range of applications. With a voltage rating of 650V and a current handling capability of 20A, this power MOSFET offers exceptional performance and reliability.
Featuring a low on-resistance of 0.18Ω, the LSB65R180GT ensures efficient power transfer and minimizes power losses, resulting in improved overall system efficiency. This MOSFET is built to withstand high voltage and current conditions, making it suitable for high-power electronic devices.
With its advanced design and robust construction, this power MOSFET guarantees exceptional switching performance, enabling seamless operation in various electronic circuits. Whether you need to control high-speed switching or amplify electronic signals, the LSB65R180GT is the perfect choice.
In addition to its impressive technical specifications, this MOSFET is also designed with durability in mind. It is built to last, ensuring long-term reliability even in demanding environments.
Trust the High Voltage N-channel 650V, 20A, 0.18Ω Power MOSFET LSB65R180GT to deliver exceptional performance, reliability, and efficiency for all your switching and amplifying needs in electronic devices. Invest in this professional-grade solution and elevate your electronic designs to new heights.
Product Specifications:
Product Name:
High Voltage N-channel 650V, 20A, 0.18Ω Power MOSFET LSB65R180GT
Product Description:
Description:
LonFETTM Power MOSFET is fabricated
using advanced super junction technology.
The resulting device has extremely low on
resistance, making it especially suitable for
applications which require superior power
density and outstanding efficiency.
Features:
Ultra low RDS(on)
Ultra low gate charge (typ. Qg = 39nC)
100% UIS tested
RoHS compliant
Applications:
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
Product Summary:
VDS Tj,max: 700V
RDS(on),max: 0.18Ω
IDM: 60A
Qg,typ: 39nC
Introducing the High Voltage N-channel 650V, 20A, 0.18Ω Power MOSFET LSB65R180GT, a cutting-edge solution designed to meet the demanding requirements of electronic devices.
This professional-grade MOSFET is specifically engineered for switching and amplifying electronic signals, making it an ideal choice for a wide range of applications. With a voltage rating of 650V and a current handling capability of 20A, this power MOSFET offers exceptional performance and reliability.
Featuring a low on-resistance of 0.18Ω, the LSB65R180GT ensures efficient power transfer and minimizes power losses, resulting in improved overall system efficiency. This MOSFET is built to withstand high voltage and current conditions, making it suitable for high-power electronic devices.
With its advanced design and robust construction, this power MOSFET guarantees exceptional switching performance, enabling seamless operation in various electronic circuits. Whether you need to control high-speed switching or amplify electronic signals, the LSB65R180GT is the perfect choice.
In addition to its impressive technical specifications, this MOSFET is also designed with durability in mind. It is built to last, ensuring long-term reliability even in demanding environments.
Trust the High Voltage N-channel 650V, 20A, 0.18Ω Power MOSFET LSB65R180GT to deliver exceptional performance, reliability, and efficiency for all your switching and amplifying needs in electronic devices. Invest in this professional-grade solution and elevate your electronic designs to new heights.
Product Specifications:
