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650V 20A IGBT Discrete, TO-263, DGB20N65CTL0

650V 20A IGBT Discrete
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  • DGB20N65CTL0

  • Merry

650V 20A IGBT Discrete, TO-263, DGB20N65CTL0

Product Summary :
- VDS 60V
- ID 350mA
- RDS(ON)( at VGS=10V) <1.0Ω
- RDS(ON)( at VGS=4.5V) <1.4Ω

General Description :
- Trench Power MV MOSFET technology
- Voltage controlled small signal switch
- Low input Capacitance
- Fast Switching Speed
- Low Input / Output Leakage
- Moisture Sensitivity Level 1
- Epoxy Meets UL 94 V-0 Flammability Rating
- Halogen Free

Applications :
- Battery operated systems
- Solid-state relays
- Direct logic-level interface:TTL/CMOS


DGB20N65CTL0Name1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

MG200HF12LEC2

Name1

MG25P12E1

Name2


products-1

Name1

GD300HFX170C2S

Name2

DGB20N65CTL_页面_1

DGB20N65CTL_页面_2

DGB20N65CTL_页面_3

COMPANY PROFILE-01

En_Merry catalogue_16-9_页面_01

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En_Merry catalogue_16-9_页面_09

En_Merry catalogue_16-9_页面_10

En_Merry catalogue_16-9_页面_11

FAQ-01


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IGBT Discrete 650V 20A IGBT Discrete TO-263 IGBT Discrete High Voltage Diode 500kv Fast Recovery Diode Rectifier

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Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China 
Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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