English 
G3S06504J
Product Name:
650V/4A Silicon Carbide Power Schottky Barrier Diode G3S06504J TO-220ISO
Product Description:
Features:
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behavior
• High temperature operation
• High frequency operation
Benifits:
• Unipolar rectifier
• Substantially reduced switching losses
• No thermal run-away with parallel devices
• Reduced heat sink requirements
Applications:
• SMPS, e.g., CCM PFC;
• Motor drives, Solar application, UPS,
Wind turbine, Rail traction, EV/HEV
Introducing the 650V/4A Silicon Carbide Power Schottky Barrier Diode G3S06504J TO-220ISO, a cutting-edge solution for controlling the on/off status of your circuitry.
With its advanced technology and superior performance, this diode is designed to meet the demands of modern control systems. The 650V voltage rating ensures reliable operation even in high-power applications, while the 4A current rating allows for efficient and effective circuit control.
Crafted with precision and built to last, this power diode boasts a robust construction that can withstand demanding environments. The TO-220ISO package provides ease of installation and ensures optimal thermal management, allowing for enhanced reliability and extended product lifespan.
With this Silicon Carbide Power Schottky Barrier Diode, you can have peace of mind knowing that your control circuitry is in capable hands. Its professional-grade quality and exceptional performance make it an ideal choice for a wide range of applications, from industrial automation to renewable energy systems.
Invest in the future of control circuitry with the 650V/4A Silicon Carbide Power Schottky Barrier Diode G3S06504J TO-220ISO. Experience unrivaled efficiency, reliability, and performance like never before.
Product Specifications:
Product Name:
650V/4A Silicon Carbide Power Schottky Barrier Diode G3S06504J TO-220ISO
Product Description:
Features:
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behavior
• High temperature operation
• High frequency operation
Benifits:
• Unipolar rectifier
• Substantially reduced switching losses
• No thermal run-away with parallel devices
• Reduced heat sink requirements
Applications:
• SMPS, e.g., CCM PFC;
• Motor drives, Solar application, UPS,
Wind turbine, Rail traction, EV/HEV
Introducing the 650V/4A Silicon Carbide Power Schottky Barrier Diode G3S06504J TO-220ISO, a cutting-edge solution for controlling the on/off status of your circuitry.
With its advanced technology and superior performance, this diode is designed to meet the demands of modern control systems. The 650V voltage rating ensures reliable operation even in high-power applications, while the 4A current rating allows for efficient and effective circuit control.
Crafted with precision and built to last, this power diode boasts a robust construction that can withstand demanding environments. The TO-220ISO package provides ease of installation and ensures optimal thermal management, allowing for enhanced reliability and extended product lifespan.
With this Silicon Carbide Power Schottky Barrier Diode, you can have peace of mind knowing that your control circuitry is in capable hands. Its professional-grade quality and exceptional performance make it an ideal choice for a wide range of applications, from industrial automation to renewable energy systems.
Invest in the future of control circuitry with the 650V/4A Silicon Carbide Power Schottky Barrier Diode G3S06504J TO-220ISO. Experience unrivaled efficiency, reliability, and performance like never before.
Product Specifications:
