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Lonten Low Voltage N-channel 85V, 110A, 5.2mΩ Power MOSFET LSGE085R052 TO-263

Lonten Low Voltage N-channel 85V, 110A, 5.2mΩ Power MOSFET LSGE085R052 TO-263
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  • LSGE085R052

Product Name:

Lonten Low Voltage N-channel 85V, 110A, 5.2mΩ Power MOSFET LSGE085R052 TO-263


Product Description:

Description:

These N-Channel enhancement mode power field

effect transistors are using shielded gate trench

DMOS technology. This advanced technology has

been especially tailored to minimize on-state

resistance,provide superior switching performance,

and with stand high energy pulse in the avalanche

and commutation mode. These devices are well

suited for high efficiency fast switching applications.

Features:

 85V,110A,RDS(on).max=5.2mΩ@VGS = 10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green device available

Applications:

 Motor Drives

 UPS

 DC-DC Converter

Product Summary:

VDSS: 85V

RDS(on).max VGS=10V 5.2mΩ

ID: 110A



Introducing the Lonten Low Voltage N-channel 85V, 110A, 5.2mΩ Power MOSFET LSGE085R052 TO-263. This high-quality MOSFET is designed for efficiently switching and amplifying electronic signals in a wide range of electronic devices. With a voltage rating of 85V and a current rating of 110A, this MOSFET offers reliable performance and precise control. The low on-resistance of 5.2mΩ ensures minimal power loss and maximum efficiency. Trust the Lonten Power MOSFET for your electronic signal processing needs.


Product Specifications:

Lonten-LSGE085R052.pdf

Lonten-LSGE085R052_页面_1Lonten-LSGE085R052_页面_2Lonten-LSGE085R052_页面_3Lonten-LSGE085R052_页面_4Lonten-LSGE085R052_页面_5Lonten-LSGE085R052_页面_6Lonten-LSGE085R052_页面_7

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Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China 
Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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