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WMB017N03LG2
Wayon
Product Name:
30V N-Channel Enhancement Mode Power MOSFET WMB017N03LG2 PDFN5060-8L
Product Description:
Description：
WMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET
technology that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance. This device
is well suited for high efficiency fast switching applications.
Features：
VDS = 30V, ID = 100A
RDS(on) < 1.7mΩ VGS = 10V
RDS(on) < 2.5mΩ VGS = 4.5V
Low RDS(on)
Low Gate Charge
100% EAS Guaranteed
RoHS and Halogen-Free Compliant
Applications：
Power Management in Switches
DC/DC Converter
Introducing the 30V N-Channel Enhancement Mode Power MOSFET WMB017N03LG2 PDFN5060-8L, a high-performance electronic component designed to efficiently switch or amplify electronic signals.
This professional-grade MOSFET offers exceptional reliability and functionality, making it an ideal choice for a wide range of applications. With a voltage rating of 30V, it can handle various power requirements with ease.
Equipped with enhancement mode technology, this MOSFET ensures seamless signal switching and amplification, providing optimal performance and accuracy. Its N-Channel design further enhances its efficiency and overall functionality.
The WMB017N03LG2 PDFN5060-8L MOSFET boasts a compact and space-saving form factor, making it suitable for integration into compact electronic devices or circuit boards. Its durable construction guarantees long-lasting performance even in demanding environments.
With this power MOSFET, you can confidently tackle projects that require precise signal control or amplification. It is a reliable and versatile component that meets the highest industry standards, ensuring exceptional performance and longevity.
Choose the 30V N-Channel Enhancement Mode Power MOSFET WMB017N03LG2 PDFN5060-8L for your electronic applications, and experience unparalleled signal switching and amplification capabilities in a professional-grade package.
Product Specifications:
Product Name:
30V N-Channel Enhancement Mode Power MOSFET WMB017N03LG2 PDFN5060-8L
Product Description:
Description：
WMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET
technology that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance. This device
is well suited for high efficiency fast switching applications.
Features：
VDS = 30V, ID = 100A
RDS(on) < 1.7mΩ VGS = 10V
RDS(on) < 2.5mΩ VGS = 4.5V
Low RDS(on)
Low Gate Charge
100% EAS Guaranteed
RoHS and Halogen-Free Compliant
Applications：
Power Management in Switches
DC/DC Converter
Introducing the 30V N-Channel Enhancement Mode Power MOSFET WMB017N03LG2 PDFN5060-8L, a high-performance electronic component designed to efficiently switch or amplify electronic signals.
This professional-grade MOSFET offers exceptional reliability and functionality, making it an ideal choice for a wide range of applications. With a voltage rating of 30V, it can handle various power requirements with ease.
Equipped with enhancement mode technology, this MOSFET ensures seamless signal switching and amplification, providing optimal performance and accuracy. Its N-Channel design further enhances its efficiency and overall functionality.
The WMB017N03LG2 PDFN5060-8L MOSFET boasts a compact and space-saving form factor, making it suitable for integration into compact electronic devices or circuit boards. Its durable construction guarantees long-lasting performance even in demanding environments.
With this power MOSFET, you can confidently tackle projects that require precise signal control or amplification. It is a reliable and versatile component that meets the highest industry standards, ensuring exceptional performance and longevity.
Choose the 30V N-Channel Enhancement Mode Power MOSFET WMB017N03LG2 PDFN5060-8L for your electronic applications, and experience unparalleled signal switching and amplification capabilities in a professional-grade package.
Product Specifications:
