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Home » Products » Transistor » NP Mosfet » N-Channel and P-Channel Complementary MOSFET, DFN3333-8L, YJQ4606B

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N-Channel and P-Channel Complementary MOSFET, DFN3333-8L, YJQ4606B

30V/-30V, 28A/-20A N-Channel and P-Channel Complementary MOSFET
 
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  • YJQ4606B

  • Merry

N-Channel and P-Channel Complementary MOSFET, VDSS: 30/-30V, ID: 28/-20A, PD: 27/27W, fetures, applications, DFN3333-8L, YJQ4606B


Features :

NMOS :
- VDS :30V
- ID : 28A
- RDS(ON)( at VGS=10V) : < 18mΩ
- RDS(ON)( at VGS=4.5V) : <30mΩ

PMOS :
- VDS : -30V
- ID : -20A
- RDS(ON)( at VGS=-10V) : < 40mΩ
- RDS(ON)( at VGS=-4.5V) : < 60mΩ
- 100% EAS Tested

General Description :
- Trench Power LV MOSFET technology
- High density cell design for low RDS(ON)
- High Speed switching
- Moisture Sensitivity Level 3
- Epoxy Meets UL 94 V-0 Flammability Rating
- Halogen Free

Applications :
- Wireless charger
- Load switch
- Power management

YJQ4606B

Name1

1000_F_48893186

Name2


1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name1

MF200DU06FJ

Name2

A9RDA01

Name1

MF200K04F3LG

Name2



1000_F_7729663_28CIkxq1Vtz80Q8zUQHmVvkae3SmjH2b

Name1

MF300U05F6

Name2

YJQ4606B-1_页面_1

YJQ4606B-1_页面_2

YJQ4606B-1_页面_3


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VDSS: 30/-30V MOSFET ID: 28/-20A YJQ4606B Mosfet Schottky silicon Rectifier Diode IGBT Module Silicon Carbide MOSFET Rectifier Bridge Transistor

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Email: jennie@merryelc.com
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