650V/ 8A Silicon Carbide Power Schottky Barrier Diode G4S06508HT TO-220F

Product Name:

650V/ 8A Silicon Carbide Power Schottky Barrier Diode G4S06508HT TO-220F

Product Description:

Features:

• Zero reverse recovery current

• Zero forward recovery voltage

• Temperature independent switching behavior

• High temperature operation

• High frequency operation

Benifits:

• Unipolar rectifier

• Substantially reduced switching losses

• No thermal run-away with parallel devices

• Reduced heat sink requirements

Applications:

• SMPS, e.g., CCM PFC;

• Motor drives, Solar application, UPS,

Wind turbine, Rail traction, EV/HEV

Introducing the 650V/8A Silicon Carbide Power Schottky Barrier Diode G4S06508HT TO-220F. This high-quality diode is designed to efficiently control the on/off state of your circuit, ensuring optimal performance. With a voltage rating of 650V and a current rating of 8A, this diode is capable of handling demanding power requirements. Its TO-220F packaging provides easy installation and ensures reliable operation. Trust this professional-grade diode to deliver precise and reliable control for your circuit's switching needs.

Product Specifications:

G4S06508HT.pdf