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WMB080N10LG2
Wayon
Product Name:
100V N-Channel Enhancement Mode Power MOSFET WMB080N10LG2 PDFN5060-8L
Product Description:
Description：
WMB080N10LG2 uses Wayon's 2nd generation power trench MOSFET
technology that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance. This device
is well suited for high efficiency fast switching applications.
Features:
● VDS = 100V, ID = 74A
RDS(on) < 8mΩ VGS = 10V
RDS(on) < 11mΩ VGS = 4.5V
● Green Device Available
●100% EAS Guaranteed
● Optimized for High Speed Smooth Switching
Applications：
● Power Management Switches
●DC/DC Converters
● Synchronous Rectification
Introducing the 100V N-Channel Enhancement Mode Power MOSFET WMB080N10LG2 PDFN5060-8L. This professional-grade power MOSFET is designed to efficiently switch or amplify electronic signals with utmost precision.
With a voltage rating of 100V, this N-Channel MOSFET is capable of handling high-power applications with ease. Its enhancement mode ensures seamless signal amplification, allowing for optimal performance in various electronic circuits.
The WMB080N10LG2 PDFN5060-8L package offers excellent thermal dissipation, ensuring reliable operation even in demanding conditions. This MOSFET is built to withstand high temperatures and maintain stable performance over extended periods.
Whether you need to switch or amplify electronic signals, this power MOSFET is a reliable choice. Its professional-grade construction and advanced features make it suitable for a wide range of applications, including power supplies, motor control, and audio amplification.
Invest in the 100V N-Channel Enhancement Mode Power MOSFET WMB080N10LG2 PDFN5060-8L and experience enhanced signal control and amplification like never before. Trust in its superior quality and performance to meet your electronic circuit needs with utmost precision and efficiency.
Product Specifications:
Product Name:
100V N-Channel Enhancement Mode Power MOSFET WMB080N10LG2 PDFN5060-8L
Product Description:
Description：
WMB080N10LG2 uses Wayon's 2nd generation power trench MOSFET
technology that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance. This device
is well suited for high efficiency fast switching applications.
Features:
● VDS = 100V, ID = 74A
RDS(on) < 8mΩ VGS = 10V
RDS(on) < 11mΩ VGS = 4.5V
● Green Device Available
●100% EAS Guaranteed
● Optimized for High Speed Smooth Switching
Applications：
● Power Management Switches
●DC/DC Converters
● Synchronous Rectification
Introducing the 100V N-Channel Enhancement Mode Power MOSFET WMB080N10LG2 PDFN5060-8L. This professional-grade power MOSFET is designed to efficiently switch or amplify electronic signals with utmost precision.
With a voltage rating of 100V, this N-Channel MOSFET is capable of handling high-power applications with ease. Its enhancement mode ensures seamless signal amplification, allowing for optimal performance in various electronic circuits.
The WMB080N10LG2 PDFN5060-8L package offers excellent thermal dissipation, ensuring reliable operation even in demanding conditions. This MOSFET is built to withstand high temperatures and maintain stable performance over extended periods.
Whether you need to switch or amplify electronic signals, this power MOSFET is a reliable choice. Its professional-grade construction and advanced features make it suitable for a wide range of applications, including power supplies, motor control, and audio amplification.
Invest in the 100V N-Channel Enhancement Mode Power MOSFET WMB080N10LG2 PDFN5060-8L and experience enhanced signal control and amplification like never before. Trust in its superior quality and performance to meet your electronic circuit needs with utmost precision and efficiency.
Product Specifications:
