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G5S12010M
Product Name:
1200V/10A Silicon Carbide Power Schottky Barrier Diode G5S12010M TO-220F
Product Description:
Features:
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behavior
• High temperature operation
• High frequency operation
Benefits:
• Unipolar rectifier
• Substantially reduced switching losses
• No thermal run-away with parallel devices
• Reduced heat sink requirements
Applications:
• SMPS, e.g., CCM PFC;
• Motor drives, Solar application, UPS,
Wind turbine, Rail traction, EV/HEV
Introducing the 1200V/10A Silicon Carbide Power Schottky Barrier Diode G5S12010M TO-220F, a cutting-edge solution for controlling circuit states with utmost precision and efficiency.
Designed with utmost professionalism, this high-performance diode offers unparalleled reliability and performance. With a voltage rating of 1200V and a current handling capacity of 10A, it is engineered to tackle the most demanding applications with ease.
The Silicon Carbide technology employed in this diode ensures superior power handling capabilities, enabling seamless control of circuit states. Its Schottky Barrier design further enhances its efficiency by minimizing voltage drops and reducing power dissipation.
The TO-220F package ensures easy installation and robust thermal management, allowing for optimal performance even in challenging environments. This diode is built to withstand high temperatures and deliver consistent results over extended periods.
Whether you are working on power electronics, industrial automation, or renewable energy applications, the 1200V/10A Silicon Carbide Power Schottky Barrier Diode G5S12010M TO-220F is the perfect choice. Trust in its professional-grade quality and unleash the full potential of your control circuits.
Product Specifications:
Product Name:
1200V/10A Silicon Carbide Power Schottky Barrier Diode G5S12010M TO-220F
Product Description:
Features:
• Zero reverse recovery current
• Zero forward recovery voltage
• Temperature independent switching behavior
• High temperature operation
• High frequency operation
Benefits:
• Unipolar rectifier
• Substantially reduced switching losses
• No thermal run-away with parallel devices
• Reduced heat sink requirements
Applications:
• SMPS, e.g., CCM PFC;
• Motor drives, Solar application, UPS,
Wind turbine, Rail traction, EV/HEV
Introducing the 1200V/10A Silicon Carbide Power Schottky Barrier Diode G5S12010M TO-220F, a cutting-edge solution for controlling circuit states with utmost precision and efficiency.
Designed with utmost professionalism, this high-performance diode offers unparalleled reliability and performance. With a voltage rating of 1200V and a current handling capacity of 10A, it is engineered to tackle the most demanding applications with ease.
The Silicon Carbide technology employed in this diode ensures superior power handling capabilities, enabling seamless control of circuit states. Its Schottky Barrier design further enhances its efficiency by minimizing voltage drops and reducing power dissipation.
The TO-220F package ensures easy installation and robust thermal management, allowing for optimal performance even in challenging environments. This diode is built to withstand high temperatures and deliver consistent results over extended periods.
Whether you are working on power electronics, industrial automation, or renewable energy applications, the 1200V/10A Silicon Carbide Power Schottky Barrier Diode G5S12010M TO-220F is the perfect choice. Trust in its professional-grade quality and unleash the full potential of your control circuits.
Product Specifications:
