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1000V/200A IGBT Trench-FS Gen1, F6, GD200DFS100F6S

1000V/200A IGBT Trench-FS Gen1
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  • GD200DFS100F6S

  • Merry

1000V/200A IGBT Trench-FS Gen1, F6, GD200DFS100F6S
Package: F6
Rated Current: 200A
Chip Type: Trench-FS Gen1
Rated Voltage: 1000V
Circuit Structure: BOOST
Hallmark: Flat Substrates


Features :
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology

Typical Applications :
- Solar power

GD200DFS100F6SName1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

GD560HTX75P7HN

Name1

MG25P12E1

Name2


products-1

Name1

GD660HFA75N5HY_B29

Name2

GD200DFS100F6S-1_页面_1

GD200DFS100F6S-1_页面_2

GD200DFS100F6S-1_页面_3

COMPANY PROFILE-01

En_Merry catalogue_16-9_页面_01

En_Merry catalogue_16-9_页面_02

En_Merry catalogue_16-9_页面_03

En_Merry catalogue_16-9_页面_05

En_Merry catalogue_16-9_页面_06

En_Merry catalogue_16-9_页面_07

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En_Merry catalogue_16-9_页面_09

En_Merry catalogue_16-9_页面_10

En_Merry catalogue_16-9_页面_11

FAQ-01


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1000V/200A Trench-FS Gen1 IGBT GD200DFS100F6S IGBT F6 IGBT BOOST Fast Recovery Diode Rectifier

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Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China 
Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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