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1000V/800A IGBT Trench-FS Gen1, F6, GD800AYS100F6S

1000V/800A IGBT Trench-FS Gen1
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  • GD800AYS100F6S

  • Merry

1000V/800A IGBT Trench-FS Gen1, F6, GD800AYS100F6S
Package: F6
Rated Current: 800A
Chip Type: Trench-FS Gen1
Rated Voltage: 1000V
Circuit Structure: 3-level A-NPC
Hallmark: Flat Substrates

Features :
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology

Typical Applications :
- Solar power
- 3-level-application
- UPS systems

GD800AYS100F6SName1

1000_F_48893186

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K7B-A5

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1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

GD560HTX75P7HN

Name1

MG25P12E1

Name2


products-1

Name1

GD660HFA75N5HY_B29

Name2

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COMPANY PROFILE-01

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FAQ-01


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1000V/800A Trench-FS Gen1 IGBT GD800AYS100F6S IGBT F6 IGBT 3-level A-NPC Fast Recovery Diode Rectifier

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Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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