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Home » Products » Silicon Carbide Diode » SIC MOSFET » 1200V/2.83mΩ SiC MOSFET, N4, MD29HFC120N4HFY

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1200V/2.83mΩ SiC MOSFET, N4, MD29HFC120N4HFY

1200V/2.83mΩ SiC MOSFET
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  • MD29HFC120N4HFY

  • Merry

1200V/2.83mΩ SiC MOSFET, N4, MD29HFC120N4HFY
Package: N4
Rated Current: -
Chip Type: SiC
Rated Voltage: 1200V
Circuit Structure: Half Bridge
Hallmark: Injection Molding,PINFIN Substrates


Features :
- SiC power MOSFET
- High blocking voltage with low RDS(on)
- Easy to parallel and simple to drive
- Low inductance case avoid oscillations
- Isolated copper pinfin baseplate using Si3N4 AMB technology
- PressFIT contact technology

Typical Applications :
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive

MD29HFC120N4HFYName1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

GD560HTX75P7HN

Name1

MG25P12E1

Name2


products-1

Name1

GD660HFA75N5HY_B29

Name2

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COMPANY PROFILE-01

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FAQ-01


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1200V/2.83mΩ SiC MOSFET MD29HFC120N4HFY SiC MOSFET N4 SiC MOSFET Half Bridge Fast Recovery Diode Rectifier

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Phone: +86-13549368780
Tel: +86-0769-21665206
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