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1200V/200A IGBT Trench-FS Gen1, C8.1, GD200HFX120C8SN

1200V/200A IGBT Trench-FS Gen1
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  • GD200HFX120C8SN

  • Merry

1200V/200A IGBT Trench-FS Gen1, C8.1, GD200HFX120C8SN
Package: C8.1
Rated Current: 200A
Chip Type: Trench-FS Gen1
Rated Voltage: 1200V
Circuit Structure: Half Bridge
Hallmark: Flat Substrates


Features :
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology

Typical Applications :
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply

GD200HFX120C8SNName1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

GD560HTX75P7HN

Name1

MG25P12E1

Name2


products-1

Name1

GD660HFA75N5HY_B29

Name2

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GD200HFX120C8SN-1_页面_3

COMPANY PROFILE-01

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FAQ-01


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1200V/200A IGBT Trench-FS Gen1 GD200HFX120C8SN IGBT C8.1 IGBT Half Bridge Fast Recovery Diode Rectifier

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Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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