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DG200X12T6B
Merry
1200V/200A IGBT with Diode Single Phase Trench-FS Gen1, T6, DG200X12T6B
Package:T6
Rated Current:200A
Chip Type:Trench-FS Gen1
Rated Voltage:1200V
Circuit Structure:T6
Hallmark:Injection Molding
Features :
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated heatsink using Si3N4 AMB technology
- Lead free package
Typical Applications :
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
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1200V/200A IGBT with Diode Single Phase Trench-FS Gen1, T6, DG200X12T6B
Package:T6
Rated Current:200A
Chip Type:Trench-FS Gen1
Rated Voltage:1200V
Circuit Structure:T6
Hallmark:Injection Molding
Features :
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated heatsink using Si3N4 AMB technology
- Lead free package
Typical Applications :
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Name1
Name2
Name1
Name2
Name1
Name2
Name1
Name2