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GD275MJS120L6S
Merry
1200V/275A IGBT Trench-FS Gen1, L6, GD275MJS120L6S
Package: L6
Rated Current: 275A
Chip Type: Trench-FS Gen1
Rated Voltage: 1200V
Circuit Structure: 3-level I-NPC
Hallmark: Flat Substrates
Features :
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using Si3N4 AMB technology
Typical Applications :
- Solar power
- 3-level-application
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Name1
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1200V/275A IGBT Trench-FS Gen1, L6, GD275MJS120L6S
Package: L6
Rated Current: 275A
Chip Type: Trench-FS Gen1
Rated Voltage: 1200V
Circuit Structure: 3-level I-NPC
Hallmark: Flat Substrates
Features :
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using Si3N4 AMB technology
Typical Applications :
- Solar power
- 3-level-application
Name1
Name2
Name1
Name2
Name1
Name2
Name1
Name2