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Home » Products » Silicon Carbide Diode » SIC MOSFET » 1200V/8.86 mΩ SiC MOSFET, T6, DM88C12T6

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1200V/8.86 mΩ SiC MOSFET, T6, DM88C12T6

1200V/8.86 mΩ SiC MOSFET
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  • DM88C12T6

  • Merry

1200V/8.86 mΩ SiC MOSFET, T6, DM88C12T6
Package: T6
Rated Current: -
Chip Type: SiC
Rated Voltage: 1200V
Circuit Structure: Single Phase
Hallmark: Injection Molding


Features :
- SiC power MOSFET
- Low RDS(on)
- Chip sintering technology
- Low inductance case avoid oscillations
- Isolated heatsink using Si3N4 AMB technology
- ROHS

Typical Applications :
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive

DM88C12T6Name1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

GD560HTX75P7HN

Name1

MG25P12E1

Name2


products-1

Name1

GD660HFA75N5HY_B29

Name2

DM88C12T6-1_页面_1

DM88C12T6-1_页面_2

DM88C12T6-1_页面_3

COMPANY PROFILE-01

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En_Merry catalogue_16-9_页面_10

En_Merry catalogue_16-9_页面_11

FAQ-01


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1200V/8.86mΩ SiC MOSFET DM88C12T6 SiC MOSFET T6 SiC MOSFET Single Phase Fast Recovery Diode Rectifier

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Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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