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1700V/1000A IGBT Trench-FS Gen1, P2, GD1000HFX170P2S

1700V/1000A IGBT Trench-FS Gen1
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  • GD1000HFX170P2S

  • Merry

1700V/1000A IGBT Trench-FS Gen1, P2, GD1000HFX170P2S
Package: P2
Rated Current: 1000A
Chip Type: Trench-FS Gen1
Rated Voltage: 1700V
Circuit Structure: Half Bridge
Hallmark: Flat Substrates


Features :
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Enlarged Diode for regenerative operation
- Isolated copper baseplate using DBC technology
- High power and thermal cycling capability

Typical Applications :
- High Power Converter
- Wind Power
- Auxiliary Inverter

GD1000HFX170P2SName1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

MG200HF12LEC2

Name1

MG25P12E1

Name2


products-1

Name1

GD300HFX170C2S

Name2

GD1000HFX170P2S-1_页面_1

GD1000HFX170P2S-1_页面_2

GD1000HFX170P2S-1_页面_3

COMPANY PROFILE-01

En_Merry catalogue_16-9_页面_01

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En_Merry catalogue_16-9_页面_03

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En_Merry catalogue_16-9_页面_09

En_Merry catalogue_16-9_页面_10

En_Merry catalogue_16-9_页面_11

FAQ-01


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1700V/1000A Trench-FS Gen1 IGBT GD1000HFX170P2S IGBT P2 IGBT Half Bridge Fast Recovery Diode Rectifier

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Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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