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1700V/1200A IGBT Trench-FS Gen1, C3, GD1200HFX170C3S

1700V/1200A IGBT Trench-FS Gen1
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  • GD1200HFX170C3S

  • Merry

1700V/1200A IGBT Trench-FS Gen1, C3, GD1200HFX170C3S
Package: C3
Rated Current: 1200A
Chip Type: Trench-FS Gen1
Rated Voltage: 1700V
Circuit Structure: Half Bridge
Hallmark: Flat Substrates


Features :
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology

Typical Applications :
- High Power Converters
- Motor Drives
- Wind Turbines

GD1200HFX170C3SName1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

GD560HTX75P7HN

Name1

MG25P12E1

Name2


products-1

Name1

GD660HFA75N5HY_B29

Name2

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COMPANY PROFILE-01

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FAQ-01


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1700V/1200A IGBT Trench-FS Gen1 GD1200HFX170C3S IGBT C3 IGBT Half Bridge Fast Recovery Diode Rectifier

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Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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