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1700V/650A IGBT Trench-FS Gen1, P1, GD650HFX170P1S_B28

1700V/650A IGBT Trench-FS Gen1, P1
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  • GD650HFX170P1S_B28

  • Merry

1700V/650A IGBT Trench-FS Gen1, P1, GD650HFX170P1S_B28
Package: P1
Rated Current: 650A
Chip Type: Trench-FS Gen1
Rated Voltage: 1700V
Circuit Structure: Half Bridge
Hallmark: Flat Substrates


Features :
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Enlarged Diode for regenerative operation
- Isolated copper baseplate using DBC technology
- High power and thermal cycling capability

Typical Applications :
- High Power Converter
- Wind and Solar Power
- Traction Drive

GD650HFX170P1S_B28Name1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

MG200HF12LEC2

Name1

MG25P12E1

Name2


products-1

Name1

GD300HFX170C2S

Name2

GD650HFX170P1S_B28-1_页面_1

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GD650HFX170P1S_B28-1_页面_3

COMPANY PROFILE-01

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En_Merry catalogue_16-9_页面_10

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FAQ-01


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1700V/650A Trench-FS Gen1 IGBT GD650HFX170P1S_B28 IGBT P1 IGBT Half Bridge Fast Recovery Diode Rectifier

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Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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