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Home » Products » IGBT » Module » Switch Module » 650V/10A Trench-FS Gen1 IGBT, F1, GD10PWX65F1S_B22

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650V/10A Trench-FS Gen1 IGBT, F1, GD10PWX65F1S_B22

650V/10A Trench-FS Gen1 IGBT
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  • GD10PWX65F1S_B22

  • Merry

650V/10A Trench-FS Gen1 IGBT, F1, GD10PWX65F1S_B22
Package:F1
Rated Current:10A
Chip Type:Trench-FS Gen1
Rated Voltage:650V
Circuit Structure:PIM
Hallmark:-

Features :
- Low VCE(sat) Trench IGBT technology
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated heatsink using DBC technology
- Pre-applied phase change material

Typical Applications :
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply

GD10PWX65F1S_B22Name1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

MG200HF12LEC2

Name1

MG25P12E1

Name2


products-1

Name1

GD300HFX170C2S

Name2

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COMPANY PROFILE-01

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FAQ-01


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650V/10A Trench-FS Gen1 IGBT GD10PWX65F1S_B22 IGBT F1 IGBT PIM Fast Recovery Diode Rectifier

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Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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