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GD450MLS65F6S
Merry
650V/450A IGBT Trench-FS Gen1, F6, GD450MLS65F6S
Package: F6
Rated Current: 450A
Chip Type: Trench-FS Gen1
Rated Voltage: 650V
Circuit Structure: 3-level I-NPC
Hallmark: Flat Substrates
Features :
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications :
- Solar power
- 3-level-application
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650V/450A IGBT Trench-FS Gen1, F6, GD450MLS65F6S
Package: F6
Rated Current: 450A
Chip Type: Trench-FS Gen1
Rated Voltage: 650V
Circuit Structure: 3-level I-NPC
Hallmark: Flat Substrates
Features :
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications :
- Solar power
- 3-level-application
Name1
Name2
Name1
Name2
Name1
Name2
Name1
Name2