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650V/800A IGBT Trench-FS Gen1, P4, GD800HTX65P4S

650V/800A IGBT Trench-FS Gen1
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  • GD800HTX65P4S

  • Merry

650V/800A IGBT Trench-FS Gen1, P4, GD800HTX65P4S
Package:P4
Rated Current:800A
Chip Type:Trench-FS Gen1
Rated Voltage:650V
Circuit Structure:Sixpack
Hallmark:PINFIN Substrates


Features :
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using DBC technology
- Low inductance case

Typical Applications :
- Hybrid and electric vehicle
- Inverter for motor drive
- Uninterruptible power supply

GD800HTX65P4SName1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

MG200HF12LEC2

Name1

MG25P12E1

Name2


products-1

Name1

GD300HFX170C2S

Name2

GD800HTX65P4S-1_页面_1

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GD800HTX65P4S-1_页面_3

COMPANY PROFILE-01

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FAQ-01


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650V/800A Trench-FS Gen1 IGBT GD800HTX65P4S IGBT P4 IGBT Sixpack Fast Recovery Diode Rectifier

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Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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