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Home » Products » Silicon Carbide Diode » SIC MOSFET » 650V N-Channel MOSFET, 38mΩ/60A/18V, TO-247-3, ASC60N650MT3

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650V N-Channel MOSFET, 38mΩ/60A/18V, TO-247-3, ASC60N650MT3

650V N-Channel MOSFET
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  • ASC60N650MT3

  • Merry

650V N-Channel MOSFET, 38mΩ/60A/18V, TO-247-3, ASC60N650MT3
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.

Features :
- High Speed Switching with Low Capacitances
- High Blocking Voltage with Low RDS(on)
- Easy to parallel and simple to drive
- ROHS Compliant, Halogen free

Applications :
- EV Charging
- DC/DC Converters
- Switch Mode Power Supplies
- UPS
- Solar PV inverters

ASC60N650MT3Name1

1000_F_48893186

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K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

GD560HTX75P7HN

Name1

MG25P12E1

Name2


products-1

Name1

GD660HFA75N5HY_B29

Name2

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FAQ-01


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650V N-Channel MOSFET 60A/18V MOSFET TO-263-7 MOSFET ASC60N650MT3 MOSFET Fast Recovery Diode Rectifier

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Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China 
Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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