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GD560HTX75P7HN
Merry
750V/560A IGBT Trench-FS Gen1, P7, GD560HTX75P7HN
Package: P7
Rated Current: 560A
Chip Type: Trench-FS Gen1
Rated Voltage: 750V
Circuit Structure: Sixpack
Hallmark: PINFIN Substrates
Features :
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using DBC technology
- Low inductance case
Typical Applications :
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
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Name1
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Name1
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750V/560A IGBT Trench-FS Gen1, P7, GD560HTX75P7HN
Package: P7
Rated Current: 560A
Chip Type: Trench-FS Gen1
Rated Voltage: 750V
Circuit Structure: Sixpack
Hallmark: PINFIN Substrates
Features :
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using DBC technology
- Low inductance case
Typical Applications :
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive
Name1
Name2
Name1
Name2
Name1
Name2
Name1
Name2