EnglishEnglish
products-bg
Home » Products » IGBT » Module » Switch Module » 750V/660A Half Bridge Trench-FS Gen2 IGBT, N5, GD660HFA75N5HY_B29

loading

750V/660A Half Bridge Trench-FS Gen2 IGBT, N5, GD660HFA75N5HY_B29

750V/660A Half Bridge Trench-FS Gen2 IGBT, N5, GD660HFA75N5HY_B29
Availability:
Inquire Add to Basket

facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

  • GD660HFA75N5HY_B29

  • Merry

750V/660A Half Bridge Trench-FS Gen2 IGBT, N5, GD660HFA75N5HY_B29
Package:N5
Rated Current:660A
Chip Type:Trench-FS Gen2
Rated Voltage:750V
Circuit Structure:Half Bridge
Hallmark:Injection Molding,PINFIN Substrates

Features :
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using Si3N4 AMB technology

Typical Applications :
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive

GD660HFA75N5HY_B29Name1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

MG200HF12LEC2

Name1

MG25P12E1

Name2


products-1

Name1

GD300HFX170C2S

Name2

GD660HFA75N5HY_B29-1_页面_1

GD660HFA75N5HY_B29-1_页面_2

GD660HFA75N5HY_B29-1_页面_3

COMPANY PROFILE-01

En_Merry catalogue_16-9_页面_01

En_Merry catalogue_16-9_页面_02

En_Merry catalogue_16-9_页面_03

En_Merry catalogue_16-9_页面_05

En_Merry catalogue_16-9_页面_06

En_Merry catalogue_16-9_页面_07

En_Merry catalogue_16-9_页面_08

En_Merry catalogue_16-9_页面_09

En_Merry catalogue_16-9_页面_10

En_Merry catalogue_16-9_页面_11

FAQ-01


Previous: 
Next: 
750V/660A Half Bridge Trench-FS Gen2 IGBT GD660HFA75N5HY_B29 IGBT N5 IGBT Half Bridge Fast Recovery Diode Rectifier

Related Products

60V 0.35A N-Channel Enhancement Mode Field Effect Transistor, SOT-23, 2N7002C
60V 0.35A N-Channel Enhancement Mode Field Effect Transistor, SOT-23, 2N7002C
60V 0.35A N-Channel Enhancement Mode Field Effect Transistor, SOT-523, 2N7002BE
60V 0.35A N-Channel Enhancement Mode Field Effect Transistor, SOT-523, 2N7002BE
1A 800V Sensitive SCRs, TO-223, YC0810S2
1A 800V Sensitive SCRs, TO-223, YC0810S2
1.1nV/√Hz High performance audio operational amplifier, SOIC-8, OPA1612AIDR
1.1nV/√Hz High performance audio operational amplifier, SOIC-8, OPA1612AIDR
65V window monitor with ultra-low static current and delay function, WSON-10(2.5x2.5), TPS37F010122DSKR
65V window monitor with ultra-low static current and delay function, WSON-10(2.5x2.5), TPS37F010122DSKR
4.2V-60V, 150mΩ, 0.1A-2.23A electronic fuse with integrated input reverse polarity protection function, HTSSOP-16-EP, TPS26600PWPR
4.2V-60V, 150mΩ, 0.1A-2.23A electronic fuse with integrated input reverse polarity protection function, HTSSOP-16-EP, TPS26600PWPR
1000W Surface Mount Transient Voltage Suppressors, SMB, 1.0SMB10A
1000W Surface Mount Transient Voltage Suppressors, SMB, 1.0SMB10A
Single IGBT Module, 6500V, 750A, HiPak, 5SNA 0750G650300
Single IGBT Module, 6500V, 750A, HiPak, 5SNA 0750G650300
50V 1A Surface Mount Fast Recovery Rectifier, SMAF, F1AF
50V 1A Surface Mount Fast Recovery Rectifier, SMAF, F1AF

Contact Us

Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China

Email: jennie@merryelc.com

Tel: +86-0769-21665206

Phone: +86-13549368780

Quick Links

Product Category

Get In Touch

Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China 
Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
Contact us
Copyright  2023 Dongguan Merry Electronic Co., Ltd. | Sitemap | Support by Leadong | Privacy Policy