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750V/660A Trench-FS Gen2 IGBT, P6, GD660HTA75P6S

750V/660A Trench-FS Gen2 IGBT
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  • GD660HTA75P6S

  • Merry

750V/660A Trench-FS Gen2 IGBT, P6, GD660HTA75P6S
Package:P6
Rated Current:660A
Chip Type:Trench-FS Gen2
Rated Voltage:750V
Circuit Structure:Sixpack
Hallmark:Flat Substrates

Features :
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology

Typical Applications :
- Automotive application
- Hybrid and electric vehicle
- Inverter for motor drive

GD660HTA75P6SName1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

MG200HF12LEC2

Name1

MG25P12E1

Name2


products-1

Name1

GD300HFX170C2S

Name2

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COMPANY PROFILE-01

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FAQ-01


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750V/660A Trench-FS Gen2 IGBT GD660HTA75P6S IGBT P6 IGBT Sixpack Fast Recovery Diode Rectifier

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Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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