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60V N-Channel Enhancement mode Mosfet Transistor SOT-23 MMBF170

60V N-Channel Enhancement mode Mosfet Transistor SOT-23 MMBF170
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  • MMBF170

Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
• Motor Control
• Power Management Functions

Features
Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant
• Halogen and Antimony Free.

Mechanical Data
• Case: SOT23 (Standard)
• Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)

MMBF170.pdf


MMBF170_页面_1MMBF170_页面_2MMBF170_页面_3MMBF170_页面_4

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Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China 
Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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