English 
IRLML6302
Description
Fifth Generation HEXFETsfromInternational Rectifierutilizeadvancedprocessingtechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switching speedand ruggedized device design that HEXFET Power MOSFETs arewell known for, provides the designerwith an extremelyefficient andreliable device for use in a wide variety of applications.A customized leadframe has been incorporated into the standardSOT-23 package to produce a HEXFET Power MOSFET with theindustry's smallest footprint. This package, dubbed the Micro3, isideal for applications where printed circuit board space is at apremium. The low profile (<1.1mm) of the Micro3 allows it to fiteasilyinto extremelythin application environments such as portableelectronics and PCMClA cards.
Features
Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
RoHS Compliant, Halogen-Free
Description
Fifth Generation HEXFETsfromInternational Rectifierutilizeadvancedprocessingtechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switching speedand ruggedized device design that HEXFET Power MOSFETs arewell known for, provides the designerwith an extremelyefficient andreliable device for use in a wide variety of applications.A customized leadframe has been incorporated into the standardSOT-23 package to produce a HEXFET Power MOSFET with theindustry's smallest footprint. This package, dubbed the Micro3, isideal for applications where printed circuit board space is at apremium. The low profile (<1.1mm) of the Micro3 allows it to fiteasilyinto extremelythin application environments such as portableelectronics and PCMClA cards.
Features
Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
RoHS Compliant, Halogen-Free
