N-Channel Enhancement Mode Power MOSFET SOP-8 NCE6005AS

Description
The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
VDS=60V,ID=5A RDS(ON) <30mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <38mΩ @ VGS=4.5V (Typ.32mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation

Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply

NCE6005AS.pdf