Home » Products » Transistor » MOSFET » SOT-23 Plastic Package NPN Silicon General Purpose Transistor MMBT3904

SOT-23 Plastic Package NPN Silicon General Purpose Transistor MMBT3904


Availability:



Inquire Add to Basket

Model:
MMBT3904

Product Description

Features
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Epoxy meets UL-94 V-0 flammability rating
Moisure Sensitivity Level 1

Applications
for switching and amplifier applications

MMBT3904.pdf

MMBT3904_页面_1 MMBT3904_页面_2 MMBT3904_页面_3 MMBT3904_页面_4 MMBT3904_页面_5 MMBT3904_页面_6 MMBT3904_页面_7

Transistor Power Transistor silicon power transistor switching transistors MMBT3904

Related Products

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 250V, ID: 8A, PD: 69W, fetures, applications, TO-252, YJD470N25H

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 50A, PD: 113W, fetures, applications, TO-252, YJD50G10A

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 150V, ID: 90A, PD: 178W, fetures, applications, TO-263, YJB90G15H

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 150V, ID: 60A, PD: 136W, fetures, applications, TO-263, YJB60G15H

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 70A, PD: 125W, fetures, applications, TO-263, YJB70G10A

P-Channel Enhancement Mode Field Effect Transistor, VDSS: -60V, ID: -0.17A, PD: 0.15W, fetures, applications, SOT-23, BSS84KJ

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 60V, ID: 110A, PD: 89W, fetures, applications, TO-252, YJD110G06A

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 60V, ID: 110A, PD: 80W, fetures, applications, TO-252, YJD110G06B

P-Channel Enhancement Mode Field Effect Transistor, VDSS: -60V, ID: -0.26A, PD: 0.27W, fetures, applications, SOT-523, BSS84KEJ

P-Channel Enhancement Mode Field Effect Transistor, VDSS: -60V, ID: -0.17A, PD: 0.35W, fetures, applications, SOT-23, BSS84

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 70A, PD: 125W, fetures, applications, TO-263,YJB70G10B

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 120V, ID: 90A, PD: 166W, fetures, applications, TO-263, YJB90G12A

P-Channel Enhancement Mode Field Effect Transistor, VDSS: -100V, ID: -20A, PD: 89W, fetures, applications, TO-252, YJD085P10A

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 130A, PD: 190W, fetures, applications, TO-263, YJB130G10A

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 80V, ID: 120A, PD: 208W, fetures, applications, TO-263, YJB120G08A

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 85V, ID: 118A, PD: 156W, fetures, applications, TO-263, YJB118G08H

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 60V, ID: 200A, PD: 260W, fetures, applications, TO-263, YJB200G06B

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 100V, ID: 180A, PD: 250W, fetures, applications, TO-263, YJB180G10H

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 40V, ID: 180A, PD: 208W, fetures, applications, TO-263, YJB180G04C

N-Channel Enhancement Mode Field Effect Transistor, VDSS: 50V, ID: 0.3A, PD: 0.29W, fetures, applications, SOT-523, BSS138BE

Product Category

Contact Us

Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China

Email: jennie@merryelc.com

Tel: +86-0769-21665206

Phone: +86-13549368780

SOT-23 Plastic Package NPN Silicon General Purpose Transistor MMBT3904

Related Products

Product Category

Contact Us

Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China

Email: jennie@merryelc.com

Tel: +86-0769-21665206

Quick Links

Product Category

Get In Touch