Silicon Power Transistors 8 AMPERES 100 VOLTS 20 WATTS MJD122T4G

Designed for general purpose amplifier and low speed switching applications.

Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040−2N6045 Series, TIP120−TIP122 Series, and TIP125−TIP127 Series
Monolithic Construction With Built−in Base−Emitter Shunt Resistor
High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
Pb−Free Packages are Available*

MJD122T4G.pdf