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IRLR120N
Description
Fifth Generation HEXFETs from International Rectifier utilizeadvancedprocessingtechniquesto achieve the lowest possibleon-resistance persilicon area. This benefit, combined with thefastswitching speedand ruggedized device designthat HEXFETPowerMOSFETsarewell known for, providesthe designerwithan extremely efficient device for use in a wide variety ofapplications.The D-PAK is designed for surface mounting using vaporphase,infrared, orwave solderingtechniques. Thestraight leadversion (lRFUseries)is forthrough-hole mountingapplications.Power dissipation levels up to 1.5 watts are possible in typicalsurface mount applications.
Features
Surface Mount (IRLR120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilizeadvancedprocessingtechniquesto achieve the lowest possibleon-resistance persilicon area. This benefit, combined with thefastswitching speedand ruggedized device designthat HEXFETPowerMOSFETsarewell known for, providesthe designerwithan extremely efficient device for use in a wide variety ofapplications.The D-PAK is designed for surface mounting using vaporphase,infrared, orwave solderingtechniques. Thestraight leadversion (lRFUseries)is forthrough-hole mountingapplications.Power dissipation levels up to 1.5 watts are possible in typicalsurface mount applications.
Features
Surface Mount (IRLR120N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free